收藏本站
ZXMP2120E5
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
-200
V
I D =-1mA, V GS =0V
I =-1mA, V DS = V GS
Gate-Source Threshold Voltage
V GS(th)
-1.5
-3.5
V
D
Gate-Body Leakage
I GSS
20
nA
V GS =
20V, V DS =0V
Zero Gate Voltage Drain Current
On-State Drain Current (1)
I DSS
I D(on)
-300
-10
-100
A
μ A
mA
V DS =-200 V, V GS =0
V DS =-160 V, V GS =0V,
T=125°C (2)
V DS =-25 V, V GS =-10V
Static Drain-Source On-State Resistance
(1)
R DS(on)
28
?
V GS =-10V, I D =-150mA
Forward Transconductance
(1)(2)
g fs
50
mS
V DS =-25V,I D =-150mA
DYNAMIC
Input Capacitance (2)
Output Capacitance (2)
Reverse Transfer Capacitance (2)
C iss
C oss
C rss
100
25
7
pF
pF
pF
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING
Turn-On Delay Time (2) (3)
Rise Time (2)(3)
Turn-Off Delay Time (2) (3)
t d(on)
t r
t d(off)
7
15
12
ns
ns
ns
V DD =-25V, I D =-150mA
Fall Time
(2)(3)
t f
15
ns
NOTES:
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2%.
(2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator.
ISSUE 2 - SEPTEMBER 2006
3
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXMP2120FFTA MOSFET P-CH 200V SOT23F-3
ZXMP2120G4TA MOSFET P-CH 200V 200MA SOT-223
ZXMP3A13FTA MOSFET P-CH 30V 1.4A SOT23-3
ZXMP3A16DN8TA MOSFET 2P-CH 30V 5.5A 8-SOIC
ZXMP3A16GTA MOSFET P-CH 30V 4.6A SOT223
ZXMP3A16N8TA MOSFET P-CH 30V 5.6A 8-SOIC
ZXMP3A17DN8TA MOSFET 2P-CH 30V 4.4A 8-SOIC
ZXMP3A17E6TA MOSFET P-CH 30V 3.2A SOT-23-6
相关代理商/技术参数
ZXMP2120FF 制造商:ZETEX 制造商全称:ZETEX 功能描述:200V SOT23F P-channel enhancement mode MOSFET
ZXMP2120FFTA 功能描述:MOSFET 200V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMP2120G4 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, 200V, -200mA, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-3.5V ;RoHS Compliant: Yes
ZXMP2120G4TA 功能描述:MOSFET 200V 200mA P-Channel Enhancement MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMP2120G4TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:200V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP3A13F 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP3A13F(1) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMP3A13F_07 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET